NVH4L020N090SC1
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NVH4L020N090SC1
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NVH4L020N090SC1

Brand:ON
Model:NVH4L020N090SC1
stock:55887
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing TR
series Automotive, AEC-Q101
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-247-4L
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 900 V
Current at 25 ° C - continuous drain (Id) 116A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 15V,18V
On resistance (maximum) for different Ids and Vgs 16 mΩ @ 60A,18V
Vgs (th) (maximum) for different Ids 4.3V @ 20mA
Gate charge (Qg) at different Vgs (maximum) 196 nC @ 15 V
Vgs (max) +22V,-8V
Input capacitance at different Vds (Ciss) (maximum) 4415 pF @ 450 V
FET function -
Power dissipation (maximum) 484W(Tc)
Common problem
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