MTB50P03HDLT4
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likeMTB50P03HDLT4
Brand：ON
Model：MTB50P03HDLT4
stock：20133
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | CT,bulk |
| series | - |
| Part status | stop production |
| working temperature | - |
| Encapsulation/Housing | D²PAK |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 50A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | - |
| On resistance (maximum) for different Ids and Vgs | 25 mΩ @ 25A,5V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 100 nC @ 5 V |
| Vgs (max) | - |
| Input capacitance at different Vds (Ciss) (maximum) | 4900 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | - |
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Industry trends
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