HUF75637S3ST
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HUF75637S3ST
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HUF75637S3ST

Brand:ON
Model:HUF75637S3ST
stock:96908
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR
series UltraFET™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 44A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 30 mΩ @ 44A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 108 nC @ 20 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1700 pF @ 25 V
FET function -
Power dissipation (maximum) 155W(Tc)
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