Installation type | Surface mount |
packing | TR |
series | FETKY™ |
Part status | stop production |
working temperature | - |
Encapsulation/Housing | 8-SOIC |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 6A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
On resistance (maximum) for different Ids and Vgs | 32 mΩ @ 6A,10V |
Vgs (th) (maximum) for different Ids | 2.5V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 30 nC @ 10 V |
Vgs (max) | ±20V |
Input capacitance at different Vds (Ciss) (maximum) | 950 pF @ 24 V |
FET function | Schottky diode (isolated) |
Power dissipation (maximum) | 2W(Ta) |