Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | TO-220 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | GaNFET(Gallium nitride) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 17A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 8V |
On resistance (maximum) for different Ids and Vgs | 180 mΩ @ 11A,8V |
Vgs (th) (maximum) for different Ids | 2.6V @ 500µA |
Gate charge (Qg) at different Vgs (maximum) | 9.3 nC @ 4.5 V |
Vgs (max) | ±18V |
Input capacitance at different Vds (Ciss) (maximum) | 760 pF @ 480 V |
FET function | - |
Power dissipation (maximum) | 96W(Tc) |