PMV56XN,215
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PMV56XN,215
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PMV56XN,215

Brand:NXP
Model:PMV56XN,215
stock:34955
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥0.11
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Common problem
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Installation type Surface mount
packing TR,CT,bulk
series TrenchMOS™
Part status stop production
working temperature -65°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23(TO-236AB)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 3.76A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 85 mΩ @ 3.6A,4.5V
Vgs (th) (maximum) for different Ids 650mV @ 1mA
Gate charge (Qg) at different Vgs (maximum) 5.4 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 230 pF @ 10 V
FET function -
Power dissipation (maximum) 1.92W(Tc)
Common problem
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