PHT6N06T,135
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likePHT6N06T,135
Brand：NXP
Model：PHT6N06T,135
stock：23314
Store：ShenZhen/Hongkong
DataSheet：
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | TrenchMOS™ |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | SC-73 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 55 V |
| Current at 25 ° C - continuous drain (Id) | 5.5A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 150 mΩ @ 5A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 5.6 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 175 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 8.3W(Tc) |
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