PHB101NQ04T,118
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PHB101NQ04T,118
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PHB101NQ04T,118

Brand:NXP
Model:PHB101NQ04T,118
stock:26260
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
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Installation type Surface mount
packing TR,CT
series TrenchMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing D2PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 75A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 8 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 4V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 36.6 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2020 pF @ 25 V
FET function -
Power dissipation (maximum) 157W(Tc)
Common problem
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