PMR370XN,115
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PMR370XN,115
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PMR370XN,115

Brand:NXP
Model:PMR370XN,115
stock:48021
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series TrenchMOS™
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-75
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 840mA(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 440 mΩ @ 200mA,4.5V
Vgs (th) (maximum) for different Ids 1.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 0.65 nC @ 4.5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 37 pF @ 25 V
FET function -
Power dissipation (maximum) 530mW(Tc)
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