PMN25UN,115
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PMN25UN,115
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PMN25UN,115

Brand:NXP
Model:PMN25UN,115
stock:6846
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.09
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series -
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-74
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 27 mΩ @ 6A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 10 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 470 pF @ 10 V
FET function -
Power dissipation (maximum) 530mW(Ta),6.25W(Tc)
Common problem
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