Installation type | Through-Hole |
packing | bulk |
series | TrenchMOS™ |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | TO-92-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 190mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 5V |
On resistance (maximum) for different Ids and Vgs | 10 Ω @ 150mA,5V |
Vgs (th) (maximum) for different Ids | 3.5V @ 1mA |
Gate charge (Qg) at different Vgs (maximum) | - |
Vgs (max) | 20V |
Input capacitance at different Vds (Ciss) (maximum) | 40 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 830mW(Ta) |