Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-23-3 |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 25 V |
Current at 25 ° C - continuous drain (Id) | 260mA(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 2.7V,4.5V |
On resistance (maximum) for different Ids and Vgs | 4 Ω @ 400mA,4.5V |
Vgs (th) (maximum) for different Ids | 1.1V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 0.36 nC @ 4.5 V |
Vgs (max) | 8V |
Input capacitance at different Vds (Ciss) (maximum) | 27.9 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | 320mW(Ta) |