DMG3401LSNQ-13
Home
Category
MOSFET
DMG3401LSNQ-13
The pictures are for reference only
like

DMG3401LSNQ-13

Brand:Diodes
Model:DMG3401LSNQ-13
stock:62256
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.24
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series -
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SC-59-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 3A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,10V
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 4A,10V
Vgs (th) (maximum) for different Ids 1.3V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 25.1 nC @ 10 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 1326 pF @ 15 V
FET function -
Power dissipation (maximum) 800mW
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer