DMTH10H010SCT
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DMTH10H010SCT
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DMTH10H010SCT

Brand:Diodes
Model:DMTH10H010SCT
stock:82166
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥1.72
The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series -
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-220-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 100A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 9.5 mΩ @ 13A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 56.4 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 4468 pF @ 50 V
FET function -
Power dissipation (maximum) 2.5W(Ta),187W(Tc)
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