SSM3K2615R,LF
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SSM3K2615R,LF
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SSM3K2615R,LF

Brand:Toshiba
Model:SSM3K2615R,LF
stock:91810
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.61
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series π-MOSV
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing SOT-23F
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 2A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 3.3V,10V
On resistance (maximum) for different Ids and Vgs 300 mΩ @ 1A,10V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 150 pF @ 10 V
FET function -
Power dissipation (maximum) 1W(Ta)
Common problem
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