SSM3J09FU,LF
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SSM3J09FU,LF
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SSM3J09FU,LF

Brand:Toshiba
Model:SSM3J09FU,LF
stock:91442
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.55
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product details
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Installation type Surface mount
packing TR,CT
series -
Part status On sale
working temperature 150°C
Encapsulation/Housing USM
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 200mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 3.3V,10V
On resistance (maximum) for different Ids and Vgs 2.7 Ω @ 100mA,10V
Vgs (th) (maximum) for different Ids 1.8V @ 100µA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 22 pF @ 5 V
FET function -
Power dissipation (maximum) 150mW(Ta)
Common problem
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