TK7P60W5,RVQ
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TK7P60W5,RVQ
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TK7P60W5,RVQ

Brand:Toshiba
Model:TK7P60W5,RVQ
stock:49469
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥2.17
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Installation type Surface mount
packing TR,CT
series DTMOSIV
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing DPAK
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 7A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 670 mΩ @ 3.5A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 350µA
Gate charge (Qg) at different Vgs (maximum) 16 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 490 pF @ 300 V
FET function Grade knot
Power dissipation (maximum) 60W(Tc)
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