TPH11006NL,LQ
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TPH11006NL,LQ
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TPH11006NL,LQ

Brand:Toshiba
Model:TPH11006NL,LQ
stock:17713
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.97
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Installation type Surface mount
packing TR,CT
series U-MOSVIII-H
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing 8-SOP Advance(5x5)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 17A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 11.4 mΩ @ 8.5A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 200µA
Gate charge (Qg) at different Vgs (maximum) 23 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2000 pF @ 30 V
FET function -
Power dissipation (maximum) 1.6W(Ta),34W(Tc)
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