XPN3R804NC,L1XHQ
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likeXPN3R804NC,L1XHQ
Brand：Toshiba
Model：XPN3R804NC,L1XHQ
stock：75334
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥1.97
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSVIII |
| Part status | On sale |
| working temperature | 175°C |
| Encapsulation/Housing | 8-TSON Advance-WF(3.1x3.1) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 40A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 3.8 mΩ @ 20A,10V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 300µA |
| Gate charge (Qg) at different Vgs (maximum) | 35 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2230 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 840mW(Ta),100W(Tc) |
Common problem
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