TPN4R712MD,L1Q
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TPN4R712MD,L1Q
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TPN4R712MD,L1Q

Brand:Toshiba
Model:TPN4R712MD,L1Q
stock:58867
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.02
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Installation type Surface mount
packing TR,CT
series U-MOSVI
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing 8-TSON Advance(3.1x3.1)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 36A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 2.5V,4.5V
On resistance (maximum) for different Ids and Vgs 4.7 mΩ @ 18A,4.5V
Vgs (th) (maximum) for different Ids 1.2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 65 nC @ 5 V
Vgs (max) ±12V
Input capacitance at different Vds (Ciss) (maximum) 4300 pF @ 10 V
FET function -
Power dissipation (maximum) 42W(Tc)
Common problem
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