TK110P10PL,RQ
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likeTK110P10PL,RQ
Brand：Toshiba
Model：TK110P10PL,RQ
stock：48001
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥1.17
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| Installation type | Surface mount |
| packing | TR,CT |
| series | - |
| Part status | On sale |
| working temperature | 175°C |
| Encapsulation/Housing | DPAK |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 40A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 10.6 mΩ @ 20A,10V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 300µA |
| Gate charge (Qg) at different Vgs (maximum) | 33 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2040 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 75W(Tc) |
Common problem
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