Installation type | Through-Hole |
packing | pipe |
series | - |
Part status | On sale |
working temperature | 150°C |
Encapsulation/Housing | TO-220SIS |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 4A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 1.7 Ω @ 2A,10V |
Vgs (th) (maximum) for different Ids | 4V @ 460µA |
Gate charge (Qg) at different Vgs (maximum) | 16 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 560 pF @ 300 V |
FET function | - |
Power dissipation (maximum) | 35W(Tc) |