TK40A06N1,S4X
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TK40A06N1,S4X
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TK40A06N1,S4X

Brand:Toshiba
Model:TK40A06N1,S4X
stock:82839
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.65
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series U-MOSVIII-H
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing TO-220SIS
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 40A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 10.4 mΩ @ 20A,10V
Vgs (th) (maximum) for different Ids 4V @ 300µA
Gate charge (Qg) at different Vgs (maximum) 23 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1700 pF @ 30 V
FET function -
Power dissipation (maximum) 30W(Tc)
Common problem
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