BUZ73ALHXKSA1
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BUZ73ALHXKSA1
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BUZ73ALHXKSA1

Brand:Infineon
Model:BUZ73ALHXKSA1
stock:30095
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.43
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series SIPMOS®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-TO220-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 200 V
Current at 25 ° C - continuous drain (Id) 5.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V
On resistance (maximum) for different Ids and Vgs 600 mΩ @ 3.5A,5V
Vgs (th) (maximum) for different Ids 2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 840 pF @ 25 V
FET function -
Power dissipation (maximum) 40W(Tc)
Common problem
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