TK1R4F04PB,LXGQ
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TK1R4F04PB,LXGQ
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TK1R4F04PB,LXGQ

Brand:Toshiba
Model:TK1R4F04PB,LXGQ
stock:32376
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥3.66
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series U-MOSIX-H
Part status On sale
working temperature 175°C
Encapsulation/Housing TO-220SM(W)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 40 V
Current at 25 ° C - continuous drain (Id) 160A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 6V,10V
On resistance (maximum) for different Ids and Vgs 1.9 mΩ @ 80A,6V
Vgs (th) (maximum) for different Ids 3V @ 500µA
Gate charge (Qg) at different Vgs (maximum) 103 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5500 pF @ 10 V
FET function -
Power dissipation (maximum) 205W(Tc)
Common problem
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