SSM5G10TU(TE85L,F)
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likeSSM5G10TU(TE85L,F)
Brand：Toshiba
Model：SSM5G10TU(TE85L,F)
stock：28937
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥0.46
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| Installation type | Surface mount |
| packing | TR,CT |
| series | U-MOSIII |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | UFV |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 1.5A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4V |
| On resistance (maximum) for different Ids and Vgs | 213 mΩ @ 1A,4V |
| Vgs (th) (maximum) for different Ids | 1V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 6.4 nC @ 4 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 250 pF @ 10 V |
| FET function | Schottky diode (isolated) |
| Power dissipation (maximum) | 500mW(Ta) |
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