BUK9E2R8-60E,127
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BUK9E2R8-60E,127
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BUK9E2R8-60E,127

Brand:NXP
Model:BUK9E2R8-60E,127
stock:11047
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.31
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Common problem
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Installation type Through-Hole
packing pipe
series TrenchMOS™
Part status stop production
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing I2PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 120A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 5V,10V
On resistance (maximum) for different Ids and Vgs 2.6 mΩ @ 25A,10V
Vgs (th) (maximum) for different Ids 2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 120 nC @ 5 V
Vgs (max) ±10V
Input capacitance at different Vds (Ciss) (maximum) 17450 pF @ 25 V
FET function -
Power dissipation (maximum) 349W(Tc)
Common problem
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