TK40S10K3Z(T6L1,NQ
The pictures are for reference only
likeTK40S10K3Z(T6L1,NQ
Brand：Toshiba
Model：TK40S10K3Z(T6L1,NQ
stock：6373
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥0.82
The market price fluctuates. Please consult the customer service for the actual price
Similar Product
product details
Common problem
Industry trends
| Installation type | Surface mount |
| packing | TR |
| series | U-MOSIV |
| Part status | Final sale |
| working temperature | 175°C(TJ) |
| Encapsulation/Housing | DPAK+ |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 40A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 18 mΩ @ 20A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 61 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 3110 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 93W(Tc) |
Common problem
Industry trends
M391A4G43AB1-CVF Samsung DDR4 2933 ECC 32GB server memory module
MTA36ASF4G72PZ-3G2R1 MG DDR4 3200 2Rx4RDIMM 32GB server memory module
HMA82GR7DJR4N-XN Hynix DDR4 3200 16GB server memory module
HMA82GR7DJR8N-WM hynix Hynix DDR4 2933 16G server memory stick
Expected 15%-20% decline in NAND Flash prices in the fourth quarter
M474A1K43DB1-CWE Samsung DDR4 3200 8GB notebook ECC memory
M393A2K40DB2-CVF Samsung DDR4 2933 16G server memory
M474A1K43BB1-CTD Samsung DDR4 8G 2666 ECC server memory
M474A4G43MB1-CTD Samsung 32G DDR4 2666 ECC workstation memory
SK Hynix: It has secured the supply of equipment to its Chinese plant without obtaining a license within one year
Hot Products
Product recommendation
Offer
