Installation type | Surface mount |
packing | TR,CT |
series | U-MOSIII |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | VS-8(2.9x1.5) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | P channels |
Drain source voltage (Vdss) | 20 V |
Current at 25 ° C - continuous drain (Id) | 2.7A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V |
On resistance (maximum) for different Ids and Vgs | 110 mΩ @ 1.4A,4.5V |
Vgs (th) (maximum) for different Ids | 1.2V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 6 nC @ 5 V |
Vgs (max) | ±8V |
Input capacitance at different Vds (Ciss) (maximum) | 470 pF @ 10 V |
FET function | Schottky diode (isolated) |
Power dissipation (maximum) | 330mW(Ta) |