TPCF8102(TE85L,F,M
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likeTPCF8102(TE85L,F,M
Brand：Toshiba
Model：TPCF8102(TE85L,F,M
stock：94542
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR |
| series | U-MOSIII |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | VS-8(2.9x1.5) |
| Country of origin | Japan |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 20 V |
| Current at 25 ° C - continuous drain (Id) | 6A(Ta) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 1.8V,4.5V |
| On resistance (maximum) for different Ids and Vgs | 30 mΩ @ 3A,4.5V |
| Vgs (th) (maximum) for different Ids | 1.2V @ 200µA |
| Gate charge (Qg) at different Vgs (maximum) | 19 nC @ 5 V |
| Vgs (max) | ±8V |
| Input capacitance at different Vds (Ciss) (maximum) | 1550 pF @ 10 V |
| FET function | - |
| Power dissipation (maximum) | 700mW(Ta) |
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