2SK4017(Q)
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2SK4017(Q)
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2SK4017(Q)

Brand:Toshiba
Model:2SK4017(Q)
stock:83028
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing bulk
series U-MOSIII
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing PW-MOLD2
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 5A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
On resistance (maximum) for different Ids and Vgs 100 mΩ @ 2.5A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 15 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 730 pF @ 10 V
FET function -
Power dissipation (maximum) 20W(Tc)
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