Installation type | Surface mount |
packing | TR |
series | U-MOSIV |
Part status | stop production |
working temperature | 150°C(TJ) |
Encapsulation/Housing | 8-TSON Advance(3.1x3.1) |
Country of origin | Japan |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 30 V |
Current at 25 ° C - continuous drain (Id) | 24A(Ta) |
Drive voltage (maximum RdsOn, minimum RdsOn) | - |
On resistance (maximum) for different Ids and Vgs | 7 mΩ @ 12A,10V |
Vgs (th) (maximum) for different Ids | 3V @ 200µA |
Gate charge (Qg) at different Vgs (maximum) | 26 nC @ 10 V |
Vgs (max) | - |
Input capacitance at different Vds (Ciss) (maximum) | 1270 pF @ 10 V |
FET function | - |
Power dissipation (maximum) | - |