TPC8A06-H(TE12LQM)
Home
Category
MOSFET
TPC8A06-H(TE12LQM)
The pictures are for reference only
like

TPC8A06-H(TE12LQM)

Brand:Toshiba
Model:TPC8A06-H(TE12LQM)
stock:7287
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series -
Part status stop production
working temperature -
Encapsulation/Housing 8-SOP(5.5x6.0)
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 12A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 10.1 mΩ @ 6A,10V
Vgs (th) (maximum) for different Ids 2.3V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 19 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 1800 pF @ 10 V
FET function Schottky diode
Power dissipation (maximum) -
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer