SSM3J14TTE85LF
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SSM3J14TTE85LF
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SSM3J14TTE85LF

Brand:Toshiba
Model:SSM3J14TTE85LF
stock:2287
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series U-MOSII
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing TSM
Country of origin Japan
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 2.7A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4V,10V
On resistance (maximum) for different Ids and Vgs 85mΩ @ 1.35A,10V
Vgs (th) (maximum) for different Ids -
Gate charge (Qg) at different Vgs (maximum) -
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 413 pF @ 15 V
FET function -
Power dissipation (maximum) 700mW(Ta)
Common problem
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