IMW65R083M1HXKSA1
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likeIMW65R083M1HXKSA1
Brand：Infineon
Model：IMW65R083M1HXKSA1
stock：49026
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥16.19
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| Installation type | Through-Hole |
| packing | pipe |
| series | CoolSiC™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO247-3-41 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 24A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
| On resistance (maximum) for different Ids and Vgs | 111 mΩ @ 11.2A,18V |
| Vgs (th) (maximum) for different Ids | 5.7V @ 3.3mA |
| Gate charge (Qg) at different Vgs (maximum) | 19 nC @ 18 V |
| Vgs (max) | +20V,-2V |
| Input capacitance at different Vds (Ciss) (maximum) | 624 pF @ 400 V |
| FET function | - |
| Power dissipation (maximum) | 104W(Tc) |
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