IRF7606TR
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IRF7606TR
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IRF7606TR

Brand:Infineon
Model:IRF7606TR
stock:33914
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.01
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing Micro8™
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 3.6A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 90 mΩ @ 2.4A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 30 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 520 pF @ 25 V
FET function -
Power dissipation (maximum) 1.8W(Ta)
Common problem
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