IRFHM9331TRPBF
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IRFHM9331TRPBF
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IRFHM9331TRPBF

Brand:Infineon
Model:IRFHM9331TRPBF
stock:9083
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.22
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series HEXFET®
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PQFN(3x3)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 11A(Ta),24A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V,20V
On resistance (maximum) for different Ids and Vgs 10 mΩ @ 11A,20V
Vgs (th) (maximum) for different Ids 2.4V @ 25µA
Gate charge (Qg) at different Vgs (maximum) 48 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 1543 pF @ 25 V
FET function -
Power dissipation (maximum) 2.8W(Ta)
Common problem
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