IRF5802TRPBF
Home
Category
MOSFET
IRF5802TRPBF
The pictures are for reference only
like

IRF5802TRPBF

Brand:Infineon
Model:IRF5802TRPBF
stock:78795
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.97
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series HEXFET®
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing Micro6™(TSOP-6)
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 150 V
Current at 25 ° C - continuous drain (Id) 900mA(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 1.2 Ω @ 540mA,10V
Vgs (th) (maximum) for different Ids 5.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 6.8 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 88 pF @ 25 V
FET function -
Power dissipation (maximum) 2W(Ta)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer