IPN80R2K4P7ATMA1
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IPN80R2K4P7ATMA1
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IPN80R2K4P7ATMA1

Brand:Infineon
Model:IPN80R2K4P7ATMA1
stock:32978
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥1.32
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT,bulk
series CoolMOS™ P7
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing PG-SOT223
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 800 V
Current at 25 ° C - continuous drain (Id) 2.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 2.4 Ω @ 800mA,10V
Vgs (th) (maximum) for different Ids 3.5V @ 40µA
Gate charge (Qg) at different Vgs (maximum) 7.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 150 pF @ 500 V
FET function -
Power dissipation (maximum) 6.3W(Tc)
Common problem
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