SPB80P06PGATMA1
Home
Category
MOSFET
SPB80P06PGATMA1
The pictures are for reference only
like

SPB80P06PGATMA1

Brand:Infineon
Model:SPB80P06PGATMA1
stock:35372
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥6.57
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series SIPMOS®
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PG-TO263-3-2
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 60 V
Current at 25 ° C - continuous drain (Id) 80A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 23 mΩ @ 64A,10V
Vgs (th) (maximum) for different Ids 4V @ 5.5mA
Gate charge (Qg) at different Vgs (maximum) 173 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 5033 pF @ 25 V
FET function -
Power dissipation (maximum) 340W(Tc)
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer