BSB017N03LX3 G
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likeBSB017N03LX3 G
Brand：Infineon
Model：BSB017N03LX3 G
stock：1212
Store：ShenZhen/Hongkong
DataSheet：
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| Installation type | Surface mount |
| packing | TR,CT |
| series | OptiMOS™ |
| Part status | stop production |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | MG-WDSON-2,CanPAK M™ |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 32A(Ta),147A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 1.7 mΩ @ 30A,10V |
| Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 102 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 7800 pF @ 15 V |
| FET function | - |
| Power dissipation (maximum) | 2.8W(Ta),57W(Tc) |
Common problem
Industry trends
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