SPB21N50C3ATMA1
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likeSPB21N50C3ATMA1
Brand：Infineon
Model：SPB21N50C3ATMA1
stock：14191
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥7.25
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | CoolMOS™ |
| Part status | Not applicable to new design |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TO263-3-2 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 560 V |
| Current at 25 ° C - continuous drain (Id) | 21A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
| On resistance (maximum) for different Ids and Vgs | 190 mΩ @ 13.1A,10V |
| Vgs (th) (maximum) for different Ids | 3.9V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 95 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2400 pF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 208W(Tc) |
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