ISC0802NLSATMA1
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likeISC0802NLSATMA1
Brand：Infineon
Model：ISC0802NLSATMA1
stock：49068
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥4.42
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| Installation type | Surface mount |
| packing | TR,CT |
| series | OptiMOS™ 5 |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | PG-TDSON-8-7 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 22A(Ta),150A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 3.6 mΩ @ 50A,10V |
| Vgs (th) (maximum) for different Ids | 2.3V @ 92µA |
| Gate charge (Qg) at different Vgs (maximum) | 73 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 5190 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 2.5W(Ta),125W(Tc) |
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