Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | SOT-223(TO-261) |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 300mA(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 10V |
On resistance (maximum) for different Ids and Vgs | 8 Ω @ 700mA,10V |
Vgs (th) (maximum) for different Ids | 4.5V @ 50µA |
Gate charge (Qg) at different Vgs (maximum) | 7.4 nC @ 10 V |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 170 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 2W(Tc) |