IMZA120R020M1HXKSA1
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likeIMZA120R020M1HXKSA1
Brand：Infineon
Model：IMZA120R020M1HXKSA1
stock：86282
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
DataSheet
Price：1+
￥46.76
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| Installation type | Through-Hole |
| packing | pipe |
| series | CoolSiC™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TO247-4-8 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 98A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 15V,18V |
| On resistance (maximum) for different Ids and Vgs | 26.9 mΩ @ 41A,18V |
| Vgs (th) (maximum) for different Ids | 5.2V @ 17.6mA |
| Gate charge (Qg) at different Vgs (maximum) | 83 nC @ 18 V |
| Vgs (max) | +20V,-5V |
| Input capacitance at different Vds (Ciss) (maximum) | 3460 nF @ 25 V |
| FET function | - |
| Power dissipation (maximum) | 375W(Tc) |
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