IAUC26N10S5L245ATMA1
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likeIAUC26N10S5L245ATMA1
Brand：Infineon
Model：IAUC26N10S5L245ATMA1
stock：63762
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥0.74
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| Installation type | Surface mount |
| packing | TR |
| series | OptiMOS™ |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | PG-TDSON-8-33 |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 100 V |
| Current at 25 ° C - continuous drain (Id) | 26A(Tj) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 24.5 mΩ @ 13A,10V |
| Vgs (th) (maximum) for different Ids | 2.2V @ 13µA |
| Gate charge (Qg) at different Vgs (maximum) | 12 nC @ 10 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 762 pF @ 50 V |
| FET function | - |
| Power dissipation (maximum) | 40W(Tc) |
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