IPD60R600E6ATMA1
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IPD60R600E6ATMA1
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IPD60R600E6ATMA1

Brand:Infineon
Model:IPD60R600E6ATMA1
stock:88469
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥0.65
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing bulk,bulk
series CoolMOS™ E6
Part status Not applicable to new design
working temperature -
Encapsulation/Housing PG-TO252-3
Country of origin Germany
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 7.3A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 600 mΩ @ 2.4A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 200µA
Gate charge (Qg) at different Vgs (maximum) 20.5 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 440 pF @ 100 V
FET function -
Power dissipation (maximum) 63W(Tc)
Common problem
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