Installation type | Surface mount |
packing | TR |
series | HEXFET® |
Part status | stop production |
working temperature | -55°C ~ 175°C(TJ) |
Encapsulation/Housing | D2PAK |
Country of origin | Germany |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 100 V |
Current at 25 ° C - continuous drain (Id) | 55A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 4V,10V |
On resistance (maximum) for different Ids and Vgs | 26 mΩ @ 29A,10V |
Vgs (th) (maximum) for different Ids | 2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 140 nC @ 5 V |
Vgs (max) | ±16V |
Input capacitance at different Vds (Ciss) (maximum) | 3700 pF @ 25 V |
FET function | - |
Power dissipation (maximum) | 3.8W(Ta),200W(Tc) |