IRF6618TR1PBF
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likeIRF6618TR1PBF
Brand：Infineon
Model：IRF6618TR1PBF
stock：77707
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR,CT |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | DIRECTFET™ MT |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 30 V |
| Current at 25 ° C - continuous drain (Id) | 30A(Ta),170A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 2.2 mΩ @ 30A,10V |
| Vgs (th) (maximum) for different Ids | 2.35V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 65 nC @ 4.5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 5640 pF @ 15 V |
| FET function | - |
| Power dissipation (maximum) | 2.8W(Ta),89W(Tc) |
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