IRF6798MTR1PBF
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likeIRF6798MTR1PBF
Brand：Infineon
Model：IRF6798MTR1PBF
stock：66651
Store：ShenZhen/Hongkong
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| Installation type | Surface mount |
| packing | TR,CT |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | DIRECTFET™ MX |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 25 V |
| Current at 25 ° C - continuous drain (Id) | 37A(Ta),197A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 1.3 mΩ @ 37A,10V |
| Vgs (th) (maximum) for different Ids | 2.35V @ 150µA |
| Gate charge (Qg) at different Vgs (maximum) | 75 nC @ 4.5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 6560 pF @ 13 V |
| FET function | Schottky diode |
| Power dissipation (maximum) | 2.8W(Ta),78W(Tc) |
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